STP20NM65N(2011) 데이터시트 - STMicroelectronics
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STP20NM65N
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16 Pages
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855.8 kB
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STMicroelectronics
Description
These devices are N-channel Power MOSFETs realized using the second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
■ 100 % avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATION
■ Switching applications
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제조사
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