STP180NS04ZC(2013) 데이터시트 - STMicroelectronics
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STP180NS04ZC
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15 Pages
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773.8 kB
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STMicroelectronics
Description
This fully clamped Power MOSFET is manufactured using an advanced mesh overlay process which is based on an innovative strip layout. The benefits of this technology, coupled with the extra clamping capabilities render this device particularly suitable for the harshest operating conditions, such as those associated with the automotive environment. The device is also suitable for other applications that require a high degree of ruggedness.
FEATUREs
• Low capacitance and gate charge
• 100% avalanche tested
• 175 °C maximum junction temperature
APPLICATIONs
• Switching and linear applications
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제조사
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