Description
This N-Channel enhancement mode MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge.
General feature
■ ULTRA LOW ON-RESISTANCE
■ 100% AVALANCHE TESTED
APPLICATIONs
■ HIGH CURRENT SWITCHING APPLICATION