Description
Using advanced proprietary trench gate and field stop structure, this IGBT leads to an optimized compromise between conduction and switching losses maximizing the efficiency for high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and a very tight parameter distribution result in an easier paralleling operation.

FEATUREs
■ High speed switching
■ Tight parameters distribution
■ Safe paralleling
■ Low thermal resistance
■ 6 µs short-circuit withstand time
■ Ultrafast soft recovery antiparallel diode
■ Lead free package

APPLICATIONs
■ Photovoltaic inverters
■ Uninterruptible power supply
■ Welding
■ Power factor correction
■ High switching frequency converters