STF9NM60N(2018) 데이터시트 - STMicroelectronics
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STF9NM60N
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24 Pages
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579.5 kB
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STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
FEATUREs
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
APPLICATIONs
• Switching applications
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제조사
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