제조사
STMicroelectronics
Description
The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) * area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum endapplication efficiency.
FEATUREs
• Reduced switching losses
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
N-channel 600 V, 162 mΩ typ., 17 A, MDmesh™ M6 Power MOSFET in a TO-220FP package
STMicroelectronics
N-channel 650 V, 0.156 Ω typ., 20 A, MDmesh™ DM2 Power MOSFET in a TO-220FP package
STMicroelectronics
N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2 Power MOSFET in a TO-220FP package
STMicroelectronics
N-channel 600 V, 61 mΩ typ., 39 A, MDmesh™ M6 Power MOSFET in a TO‑247 package
STMicroelectronics
N-channel 800 V, 1.50 Ω typ., 4 A MDmesh™ K5 Power MOSFET in a TO-220FP package
STMicroelectronics
N-channel 600 V, 162 mΩ typ., 17 A, MDmesh™ M6 Power MOSFET in a TO-220 package
STMicroelectronics
N-channel 650 V, 0.037 Ω typ., 58 A, MDmesh™ V Power MOSFET in a TO247-4 package
STMicroelectronics
N-channel 650 V, 0.056 Ω typ., 42 A, MDmesh™ V Power MOSFET in a TO247-4 package
STMicroelectronics
N-channel 650 V, 0.073 Ω typ., 30 A MDmesh M5 Power MOSFET in a TO247-4 package
STMicroelectronics
N-channel 600 V, 370 mΩ typ., 10 A MDmesh DM2 Power MOSFET in a TO-220FP package
STMicroelectronics