STF10N80K5(2014) 데이터시트 - STMicroelectronics
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STF10N80K5
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14 Pages
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543.9 kB
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STMicroelectronics
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
FEATUREs
● Industry’s best RDS(on)
● Industry’s best figure of merit (FoM)
● Ultra-low gate charge
● 100% avalanche tested
● Zener-protected
APPLICATIONs
● Switching applications
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제조사
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N-channel 800 V, 0.23 Ω typ., 16 A MDmesh K5 Power MOSFET in a D²PAK package
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N-channel 800 V, 0.23 Ω typ., 16 A MDmesh™ K5 Power MOSFET in a D²PAK package ( Rev : 2015 )
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