Description
This N-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “Single Feature Size™“strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge.

FEATUREs
■ Ultra low on-resistance
■ 100% Avalanche tested

APPLICATIONs
■ Switching application