DESCRIPTION
ST3407 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package.

FEATURE
• -30V/-4.0A, RDS(ON)= 60mΩ  @VGS = -10V
• -30V/-3.2A, RDS(ON)= 80mΩ  @VGS = -4.5V
• Super high density cell design for extremely low RDS(ON)
• Exceptional on-resistance and maximum DC current capability
• SOT-23-3L package design