NPN Silicon Epitaxial Planar Transistor
for low-frequency power and stroboscope
applications.

The transistor is subdivided into three
groups P, Q and R, according to its DC
current gain.

On special request, these transistors can be
manufactured in different pin configurations.

FEATUREs
● Low collector-emitter saturation voltage
● Satisfactory operation performances at high
   efficiency with the low voltage power supply