Description
The device is manufactured using high voltage multi-epitaxial planar technology for high
switching speeds and high voltage capability. It uses a cellular emitter structure with planar
edge termination to enhance switching speeds while maintaining the wide RBSOA.

FEATUREs
• DC current gainclassification
• High voltage capability
• Low spread of dynamic parameters
• Very high switching speed

APPLICATIONs
• Electronic ballast for fluorescent lighting
• Switch mode power supplies