Description
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability.
It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

FEATUREs
■ High voltage capability
■ Low spread of dynamic parameters
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
■ Integrated antiparallel collector-emitter diode

APPLICATIONs
■ Electronic ballast for fluorescent lighting