PRODUCT DESCRIPTION
The SST29EE512 is a 64K x8 CMOS, Page-Write EEPROM manufactured with SST’s proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29EE512 writes with a single power supply. Internal Erase/Program is transparent to the user. The SST29EE512 conforms to JEDEC standard pin assignments for byte-wide memories.

FEATURES:
• Single Voltage Read and Write Operations
    – 4.5-5.5V for SST29EE512
• Superior Reliability
    – Endurance: 100,000 Cycles (typical)
    – Greater than 100 years Data Retention
• Low Power Consumption
    – Active Current: 20 mA (typical)
    – Standby Current: 10 µA (typical)
• Fast Page-Write Operation
    – 128 Bytes per Page, 512 Pages
    – Page-Write Cycle: 5 ms (typical)
    – Complete Memory Rewrite: 2.5 sec (typical)
    – Effective Byte-Write Cycle Time: 39 µs (typical)
• Fast Read Access Time
    – 4.5-5.5V operation: 70 ns
• Latched Address and Data
• Automatic Write Timing
    – Internal VPP Generation
• End of Write Detection
    – Toggle Bit
    – Data# Polling
• Hardware and Software Data Protection
• Product Identification can be accessed via
    Software Operation
• TTL I/O Compatibility
• JEDEC Standard
    – Flash EEPROM Pinouts and command sets
• Packages Available
    – 32-lead PLCC
    – 32-lead TSOP (8mm x 20mm)
    – 32-pin PDIP
• All non-Pb (lead-free) devices are RoHS compliant