SSM6N7002CFU 데이터시트 - Toshiba
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SSM6N7002CFU
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8 Pages
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210.4 kB
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Toshiba
Features
(1) Gate-Source diode for protection
(2) Low drain-source on-resistance
: RDS(ON) = 2.8 Ω (typ.) (@VGS = 10 V, ID = 100 mA)
RDS(ON) = 3.1 Ω (typ.) (@VGS = 5 V, ID = 100 mA)
RDS(ON) = 3.2 Ω (typ.) (@VGS = 4.5 V, ID = 100 mA)
APPLICATIONs
• High-Speed Switching
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