Power Management Switch Applications

• Combined a P-channel MOSFET and a Schottky barrier diode in one package.
• Low RDS (ON) and Low VF
   RDS(ON) = 261 mΩ (max) (@VGS = -1.5V)
   RDS(ON) = 185 mΩ (max) (@VGS = -1.8 V)
   RDS(ON) = 143 mΩ (max) (@VGS = -2.5 V)
   RDS(ON) = 112 mΩ (max) (@VGS = -4.5 V)