SSM3J13T 데이터시트 - Toshiba
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SSM3J13T
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Toshiba
Power Management Switch
High Speed Switching Applications
• Small Package
• Low on Resistance : Ron = 70 mΩ (max) (@VGS = −4 V)
: Ron = 95 mΩ (max) (@VGS = −2.5 V)
• Low Gate Threshold Voltage
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제조사
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) ( Rev : 2007 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (U-MOSII) ( Rev : 2000 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) ( Rev : 2002 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII) ( Rev : 2004 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII)
Toshiba
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