DESCRIPTIONS
The SSI2007 is N and P Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift.

MECHANICAL DATA
• Trench Technology
• Supper high density cell design
• Excellent ON resistance
• Extremely Low Threshold Voltage

APPLICATION
• DC-DC converter circuit
• Load Switch