Product Description
Stanford Microdevices’ SPF-2086T is a high performance PHEMT Gallium Arsenide FET utilitzing 0.25 micron long by 300 micron wide Schottky barrier gates.
This device is ideally biased at Vds=3V and Id=20mA for lowest noise performance and battery powered requirements. At 5V, 40mA the device delivers excellent IP3 of 32 dBm. It provides ideal performance as driver stages in many commercial, industrial and military LNA applications.

Product Features
• High Gain: 20 dB at 1900 MHz
• +20 dBm Output Power at P1dB
• Low Noise Figure: 0.4 dB NF at 1900 MHz
• Low Current Draw: 20 mA typ. at 3.0V

APPLICATIONs
• LNA for Cellular, PCS, CDPD
• Wireless Data, SONET
• Driver Stage for low power applications