SPA11N80C3(2005) 데이터시트 - Infineon Technologies
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SPA11N80C3
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Infineon Technologies
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC0) for target applications
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