Features
• Built-in IGBT and diode bridge of partial switching PFC
circuit Enable to reduce mounting area
• Low saturation voltage IGBT VCE(sat) = 1.7V max
• Low saturation voltage diode bridge VF = 1.1V max
• The clip lead is adopted for inner lead.
Low inductance, low resistance, high current capability
The smoke generation and explosion are less likely
to occur in case of destruction.
APPLICATIONs
• Partial switching PFC