SKW07N120(2013) 데이터시트 - Infineon Technologies
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SKW07N120
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Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
● Lower Eoff compared to previous generation
● Short circuit withstand time – 10 μs
● Designed for:
- Motor controls
- Inverter
- SMPS
● NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
● Qualified according to JEDEC1 for target applications
● Pb-free lead plating; RoHS compliant
● Complete product spectrum and PSpice Models : //www.infineon.com/igbt/
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제조사
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ( Rev : 2013 )
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ( Rev : 2013 )
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ( Rev : 2013 )
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ( Rev : 2013 )
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ( Rev : 2013 )
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ( Rev : 2013 )
Infineon Technologies
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