The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It has a wide radiation angle and is ideal for compact optical control equipment.

FEATUREs
1) High efficiency, high output PO=11.0mW (IF=50mA).
2) Wide radiation angle θ1/2=15deg.
3) Emission spectrum well suited to silicon detectors. (λP=940nm).
4) Good current-optical output linearity.
5) Long life, high reliability.

APPLICATIONs
    Optical control equipment
    Light source for remote control devices