600 V POWER MOSFETs

Vishay is adding to its Super Junction power MOSFET family with new n-channel devices in the TO-247 package, featuring ultra-low maximum on-resistance and low gate charge for an improved figure of merit (FOM).

FEATUREs:
• High Ear capability
• Improved Ron x Qg figure of merit (FOM)
    – 18.81 Ω-nC (SiHG22N60S-E3)
        - SiHP22N60S-E3, SiHF22N60S-E3, and SiHB22N60S-E3 also available
    – 15.12 Ω-nC (SiHG47N60S-E3)
• Ultra-low R
DS(on)
• Ultra-low gate charge (Qg)
• 100 % avalanche tested
• dV/dt ruggedness
• Compliant to RoHS Directive 2002/95/EC

APPLICATIONs
• PFC power supply stages
• Hard switching topologies
• Solar inverters
• UPS
• Motor control
• Lighting
• Server telecom