VDSS = -30V
RDS(on) = 0.020Ω

Description
These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications..

Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel