Description
This N-channel HEXFET® power MOSFET is produced using International Rectifiers advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications
The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications.

• N-Channel MOSFET
• Low On-Resistance
• Low Gate Charge
• Surface Mount
• Logic Level Drive
• Lead-Free