Product Description
RFMD’s SHF-0189 is a high performance AIGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity. Output power at 1dB compression for the SHF-0189 is +27dBm when biased for Class AB operation at 8V, 100mA. The +40dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements. It is well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including 3G, cellular, PCS, fixed wireless, and pager systems.

FEATUREs
■ Available in RFMD Green, RoHS Compliant, and Pb-Free (Z Part Number)
■ High Linearity Performance at 1.96GHz
    +27dBm P1dB
    +40dBm Output IP3
    +16.5dB Gain
■ High Drain Efficiency

APPLICATIONs
■ Analog and Digital Wireless Systems
■ 3G, Cellular, PCS
■ Fixed Wireless, Pager Systems