SFT2010 데이터시트 - Solid State Devices, Inc.
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SFT2010
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Solid State Devices, Inc.
200 AMP 100 – 140 Volt High Energy NPN Transistor
FEATUREs:
• BVCBO= 250 V MIN
• 600 Watts Power Dissipation
• Excellent SOA Curve
• Es/b of 800mJ
• Gain of over 5 at 200A
• High Reliability Construction
• Planar Chip Construction with Low Leakage and Very Fast Switching
• TX, TXV, S-Level Screening Available2/-Consult Factory
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SURFACE MOUNT SILICON SCHOTTKY RECTIFIERS 5.0 AMP, 100 THRU 200 VOLT ( Rev : 2013 )
Central Semiconductor
SURFACE MOUNT SILICON SCHOTTKY RECTIFIERS 5.0 AMP, 100 THRU 200 VOLT
Central Semiconductor
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