DESCRIPTION
The SFH615XXX features a large assortment of current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package.
The coupling devices are designed for signal transmission between two electrically separated circuits.

FEATURES
• Low CTR degradation
• Good CTR linearity depending on forward current
• Isolation test voltage, 5300 VRMS
• High collector emitter voltage, VCEO = 70 V
• Low saturation voltage
• Fast switching times
• Temperature stable
• Low coupling capacitance
• End stackable, 0.100" (2.54 mm) spacing
• High common mode interference immunity (unconnected base)
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC AGENCY APPROVALS