SB039C040-0.5-W-AG 데이터시트 - Transys Electronics Limited
부품명
SB039C040-0.5-W-AG
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152 kB
제조사
Transys Electronics Limited
Features
Oxide Passivated Junction
Very Low Forward Voltage
125 º C Junction Operating
Low Reverse Leakage
Supplied as Wafers
Chromium Barrier
>1000V ESD (MM)
부품명
상세내역
PDF
제조사
Schottky cr Barrier Diode Wafer 39 Mils, 25 Volt, 0.5 Amp, 0.34VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 0.5 Amp, 0.32VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 40 Volt, 1 Amp, 0.40VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 35 Mils, 15 Volt, 1 Amp, 0.36VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 35 Mils, 15 Volt, 1 Amp, 0.36VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 1 Amp, 0.35VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 20 Volt, 1 Amp, 0.35VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 25 Volt, 1 Amp, 0.37VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 35 Mils, 15 Volt, 0.5 Amp, 0.33VF. ( Rev : V2 )
Transys Electronics Limited
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