S8201 데이터시트 - Toshiba
부품명
S8201
Other PDF
no available.
PDF
page
7 Pages
File Size
294.9 kB
제조사
Toshiba
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
Small footprint due to small and thin package
Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)
High forward transfer admittance: |Yfs| = 13 S (typ.)
Low leakage current: IDSS = 10 µA (max) (VDS = 20 V)
Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA)
부품명
상세내역
PDF
제조사
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) ( Rev : 2003 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (U-MOS II) ( Rev : 2000 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (U−MOS) ( Rev : 1999 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) ( Rev : 2009 )
Toshiba
Share Link: