[Raytheon RF Components]

Description
The Raytheon RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control capability. The circuit incorporates ion-implanted, 0.5-µm gate MESFET devices fabricated on a semi-insulating GaAs substrate. The first two stages are 4-cell distributed amplifiers utilizing dual-gate FETs for improved gain per stage and to facilitate gain control (4x125µm & 4x250µm). The third stage is a 3-cell distributed dual-gate FET amplifier designed for high output power and efficiency (3x500µm). The RMM2080 amplifier is designed for interconnection with microstrip transmission media using fully automatic assembly techniques.

FEATUREs
◆ 2-18 GHz Bandwidth
◆ 24 dB Typical Gain
◆ ±2 dB Gain Flatness
◆ 20 dBm Output Power Typical
◆ Three Stages of Distributed Amplification
◆ Gain Control of up to 70 dB range
◆ Dual-Gate Ion-Implanted 0.5 µm FETs
◆ Chip Size: 4.14mm x 3.22mm x 0.1mm