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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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RJH30 데이터시트 - Renesas Electronics

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RJH30

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Trench gate and thin wafer technology (G6H-II series), High speed switching: tr =80 ns typ., tf = 150 ns typ., Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.

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제조사
Silicon N-Channel IGBT High Speed Power Switching
Renesas Electronics
Silicon N Channel IGBT High Speed Power Switching ( Rev : 2010 )
Renesas Electronics
Silicon N Channel IGBT High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon N Channel IGBT High Speed Power Switching
Renesas Electronics
Silicon N Channel IGBT High Speed Power Switching
Renesas Electronics
Silicon N Channel IGBT High Speed Power Switching
Renesas Electronics
Silicon N Channel IGBT High Speed Power Switching
Renesas Electronics
Silicon N Channel IGBT High Speed Power Switching
Renesas Electronics
Silicon N Channel IGBT High Speed Power Switching ( Rev : 2010 )
Renesas Electronics
Silicon N Channel IGBT High Speed Power Switching
Renesas Electronics

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