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Intersil
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These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA09378.
FEATUREs
• 4A, 50V and 60V
• rDS(ON) = 0.800Ω
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs
Intersil
2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs
Intersil
4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs
Intersil
4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs
Intersil
4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs
Fairchild Semiconductor
4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs
Fairchild Semiconductor
15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs
Fairchild Semiconductor
15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs
Intersil
6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs ( Rev : 1999 )
Fairchild Semiconductor
4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs
Intersil