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RFP2P10 데이터시트 - Intersil

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RFP2P10

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Intersil
Intersil Intersil

These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters. motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.


FEATUREs
• -2A, -80V and -100V
• rDS(ON) = 3.500Ω
• Related Literature
  - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards

 

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제조사
2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs
Intersil
1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs
Intersil
-6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs
Intersil
-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs
Intersil
12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs
Intersil
-8A, -80V AND -100V, 0.400 Ohm, P-CHANNEL POWER MOSFETS
Harris Semiconductor
2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs
Intersil
1 A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs
New Jersey Semiconductor
12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs
Harris Semiconductor
1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs
New Jersey Semiconductor

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