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Intersil
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Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
FEATUREs
• 2A, 120V and 150V
• rDS(ON) = 1.750Ω
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
2A, 120V, 1.750 Ohm, Logic Level, N-Channel Power MOSFET
Intersil
4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs
Intersil
1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs
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1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs
Intersil
15A, 150V, 0.150 Ohm, N-Channel Power MOSFETs
Intersil
2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs
Intersil
2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs
Intersil
0.6A and 0.45A, 150V and 200V, 1.5 and 2.4 OHM, N-Channel Power MOSFETs
Harris Semiconductor
8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs
Intersil
4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs
Intersil