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New Jersey Semiconductor
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The RFP25N05 N-channel power MOSFET is manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. This transistor can be operated directly from integrated circuits.
FEATUREs
• 25A,50V
• rDS(ON) = 0.0470Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175°C Operating Temperature
25A, 50V, 0.047 Ohm, N-Channel Power MOSFET
Intersil
25A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFET
Intersil
25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs
Fairchild Semiconductor
25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs
Intersil
16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs
Fairchild Semiconductor
16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs ( Rev : 2002 )
Fairchild Semiconductor
16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs
Intersil
16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs
Intersil
16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs
Fairchild Semiconductor
16A, 60V, 0.047 Ohm, N-Channel Power MOSFET
Intersil