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Intersil
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Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
FEATUREs
• 1A, 180V and 200V
• rDS(ON) = 3.65Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs
New Jersey Semiconductor
12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs
Intersil
1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs
Intersil
25A, 180V and 200V, 0.150 Ohm, N-Channel Power MOSFET
Intersil
1 A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs
New Jersey Semiconductor
9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs
Intersil
18A, 200V, 0.180 Ohm, N-Channel Power Mosfets
ARTSCHIP ELECTRONICS CO.,LMITED.
4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs
Intersil
18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
Fairchild Semiconductor
1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs
New Jersey Semiconductor