These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA09821.

FEATUREs
• 75A, 50V
• rDS(ON) = 0.008Ω
• Electrostatic Discharge Rated
• UIS Rating Curve (Single Pulse)
• 175°C Operating Temperature
• Temperature Compensated PSPICE® Model Provided