This is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. This type can be operated directly from integrated circuits.
Formerly developmental type TA09835.

FEATUREs
• 60A, 50V
• rDS(ON) = 0.030Ω
• Temperature Compensating PSPICE® Model
• 2kV ESD Rated
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175°C Operating Temperature
• Related Literature
    - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”