Features
1) The QS5U26 conbines Pch Treueh MOSFET with a
Schottky barrier diode in a single TSMT5 package.
2) Pch Treueh MOSFET have a low on-state resisternce
with a fast switching.
3) Pch Treueh MOSFET is neucted a low voltage drive
(2.5V).
4) The independently connected Schottky barrier diode
have a low forward voltage.
APPLICATIONs
load switch, DC/DC conversion
Structure
• Silicon P-channel MOS FET
• Schottky Barrier DIODE