The HYB 3116(7)400BJ/BT is a 16 MBit dynamic RAM organized as 4194304 words by 4-bits. The HYB 3116(7)400BJ/BT utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB 3116(7)400BJ/BT to be packaged in a standard SOJ 26/24 300 mil or TSOPII-26/24 300 mil wide plastic package.

Advanced Information
• 4 194 304 words by 4-bit organization
• 0 to 70 ˚C operating temperature
• Performance:
• Single + 3.3 V (± 0.3 V ) supply
• Low power dissipation
    max. 396 active mW (HYB 3117400BJ/BT-50)
    max. 363 active mW (HYB 3117400BJ/BT-60)
    max. 330 active mW (HYB 3117400BJ/BT-70)
    max. 360 active mW (HYB 3116400BJ/BT-50)
    max. 324 active mW (HYB 3116400BJ/BT-60)
    max. 288 active mW (HYB 3116400BJ/BT-70)
    7.2 mW standby (LV-TTL)
    3.6 mW standby (LV-CMOS)
    720 µW standby for L-version
• Output unlatched at cycle end allows two-dimensional chip selection
• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh, Self Refresh and test mode
• Fast page mode capability
• All inputs, outputs and clocks fully TTL-compatible
• 2048 refresh cycles / 32 ms for HYB 3117400 4096 refresh cycles / 64 ms for HYB 3116400
• Plastic Package: P-SOJ-26/24-1 (300 mil) P-TSOPII-26/24-1 (300 mil)