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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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PTFA220041MV4R1KXUMA1 데이터시트 - Infineon Technologies

PTFA220041M image

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PTFA220041MV4R1KXUMA1

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Infineon
Infineon Technologies Infineon

Description
The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency and linearity performance in a small, overmolded plastic package.


FEATUREs
• Typical two-carrier WCDMA performance,
   1842 MHz, 8 dB PAR
   - POUT = 27 dBm Avg
   - ACPR = –44 dBc
• Typical CW performance, 1842 MHz, 28 V
   - POUT = 37 dBm
   - Efficiency = 53.5%
   - Gain = 17.9 dB
• Typical CW performance, 940 MHz, 28 V
   - POUT = 37.5 dBm
   - Efficiency = 57%
   - Gain = 19.7 dB
• Capable of handling 10:1 VSWR @ 28 V, 5 W (CW)
   output power
• Integrated ESD protection
• Excellent thermal stability
• Pb-free and RoHS compliant


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제조사
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High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz
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High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz ( Rev : 2015 )
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