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PTF180101S(2007) 데이터시트 - Infineon Technologies

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PTF180101S

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10 Pages

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Infineon
Infineon Technologies Infineon

Description
The PTF180101S is a 10-watt, internally-matched GOLDMOS® FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization ensures excellent device lifetime and reliability.


FEATUREs
• RoHS-compliant, Pb-free package
• Typical EDGE performance
   - Average output power = 4.0 W
   - Gain = 19.0 dB
   - Efficiency = 28%
   - EVM = 1.1 %
• Typical WCDMA performance
   - Average output power = 1.8 W
   - Gain = 18.0 dB
   - Efficiency = 20%
   - ACPR = –45 dBc
• Typical CW performance
   - Output power at P–1dB = 15 W
   - Efficiency = 50%
• Integrated ESD protection: Human Body
   Model Class 1 (minimum)
• Low HCI drift, excellent thermal stability
• Capable of handling 10:1 VSWR @ 28 V, 10
   W (CW) output power


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