제조사
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Philips Electronics
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General description
Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package. This product has been designed and qualified for use in a wide range of industrial, communications and domestic equipment.
FEATUREs and benefits
• High efficiency due to low switching and conduction losses
• Suitable for logic level gate drive
• LFPAK56 package is footprint compatible with other Power-SO8 types
• Qualified to 175 °C
APPLICATIONs
• DC-to-DC converters
• Load switch
• TV power supplies
N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56
Nexperia B.V. All rights reserved
N-channel 100 V, 15 mΩ logic level MOSFET in LFPAK56
Nexperia B.V. All rights reserved
N-channel 100 V, 12 mΩ logic level MOSFET in LFPAK56
Nexperia B.V. All rights reserved
N-channel 100 V, 21 mΩ logic level MOSFET in LFPAK56
Nexperia B.V. All rights reserved
N-channel 100 V, 19 mΩ logic level MOSFET in LFPAK56
Nexperia B.V. All rights reserved
N-channel 60 V, 13 mΩ logic level MOSFET in LFPAK56
Nexperia B.V. All rights reserved
N-channel 80 V, 10 mΩ logic level MOSFET in LFPAK56
Nexperia B.V. All rights reserved
N-channel 80 V 41 mΩ logic level MOSFET in LFPAK56
Philips Electronics
N-channel 100 V 13 mΩ standard level MOSFET in LFPAK56
Nexperia B.V. All rights reserved
N-channel 80 V, 25 mΩ logic level MOSFET in LFPAK56
Nexperia B.V. All rights reserved