FEATURE
a) Adopting 4th generation IGBT chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.7V
b) Using new Diode which is designed to get soft reverse recovery characteristics.
c) Over-temperature protection by detecting Tj of the IGBT chips
   • 3φ 300A, 600V Current-sense IGBT type inverter
   • Monolithic gate drive & protection logic
   • Detection, protection & status indication circuits for over current, short-circuit, over-temperature & under-voltage
   • Acoustic noise-less 30kW class inverter application
  
APPLICATION
  Servo drives and other motor controls