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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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PHPT61003NY 데이터시트 - Nexperia B.V. All rights reserved

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PHPT61003NY

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  2020  

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17 Pages

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665.6 kB

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NEXPERIA
Nexperia B.V. All rights reserved NEXPERIA

General description
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.

PNP complement: PHPT61003PY


FEATUREs and benefits
• High thermal power dissipation capability
• Suitable for high temperature applications up to 175 °C
• Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
• High energy efficiency due to less heat generation
• AEC-Q101 qualified


APPLICATIONs
• Power management
• Loadswitch
• Linear mode voltage regulator
• Backlighting applications


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제조사
100 V, 3 A NPN high power bipolar transistor
Nexperia B.V. All rights reserved
100 V, 3 A NPN high power bipolar transistor
Nexperia B.V. All rights reserved
100 V, 3 A PNP high power bipolar transistor
Nexperia B.V. All rights reserved
100 V, 2 A NPN high power bipolar transistor
Nexperia B.V. All rights reserved
100 V, 6 A NPN high power bipolar transistor
Nexperia B.V. All rights reserved
100 V, 6 A NPN high power bipolar transistor
Nexperia B.V. All rights reserved
100 V, 2 A PNP high power bipolar transistor
Nexperia B.V. All rights reserved
100 V, 6 A PNP high power bipolar transistor
Nexperia B.V. All rights reserved
100 V, 6 A PNP high power bipolar transistor
Nexperia B.V. All rights reserved
100 V, 2 A PNP high power bipolar transistor
Nexperia B.V. All rights reserved

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