NPN Epitaxial Planar Silicon Transistor
FEATUREs
• VCEO=200V, IC=0.7A
• High allowable power dissipation
• Halogen free compliance
• Low collector-to-emitter saturation voltage VCE(sat)=0.115V(typ.)@IC=0.35A
• High-speed switching tf=70ns(typ.)@IC=0.3A