제조사
NXP Semiconductors.
General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) SMD plastic package.
PNP complement: PBSS9110X.
FEATUREs
■ SOT89 package
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability: IC and ICM
■ High efficiency leading to less heat generation
APPLICATIONs
■ Major application segments:
♦ Automotive 42 V power
♦ Telecom infrastructure
♦ Industrial
■ Peripheral driver:
♦ Driver in low supply voltage applications (e.g. lamps and LEDs)
♦ Inductive load driver (e.g. relays, buzzers and motors)
■ DC-to-DC converter
100 V, 1 A NPN low VCEsat (BISS) transistor
Philips Electronics
100 V, 1 A NPN low VCEsat (BISS) transistor
NXP Semiconductors.
100 V, 1 A NPN low VCEsat (BISS) transistor
NXP Semiconductors.
100 V, 1 A NPN low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
100 V, 1 A NPN low VCEsat (BISS) transistor
Philips Electronics
100 V, 1 A NPN low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
100 V, 1 A NPN low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
100 V, 1 A NPN low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
100 V, 1 A NPN low VCEsat (BISS) transistor
NXP Semiconductors.
100 V, 1 A NPN low VCEsat (BISS) transistor
Philips Electronics