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Nexperia B.V. All rights reserved
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DESCRIPTION
NPN BISS transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters.
PNP complement: PBSS5130T.
FEATURES
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High efficiency leading to less heat generation
• Reduced printed-circuit board requirements
• Cost effective alternative to MOSFETs in specific
applications.
APPLICATIONS
• Power management
– DC/DC conversion
– Supply line switching
– Battery charger
– LCD backlighting.
• Peripheral driver
– Driver in low supply voltage applications (e.g. lamps
and LEDs)
– Inductive load drivers (e.g. relays, buzzers and
motors).
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