General description
Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench Metal-Oxide Semiconductor Field- Effect Transistor (MOSFET). The device is housed in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

FEATUREs and benefits
■ Very low collector-emitter saturation voltage VCEsat
■ High collector current capability IC and ICM
■ High energy efficiency due to less heat generation
■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

APPLICATIONs
■ Load switch
■ Battery-driven devices
■ Power management
■ Charging circuits
■ Power switches (e.g. motors, fans)